One-step chemical vapor growth of Ge/SiCxNynanocables

Single-step synthesis of one-dimensional Ge/SiCxNycore-shell nanocables was achieved by chemical vapor deposition of the molecular precursor [Ge{N(SiMe3)2}2]. Single crystalline Ge nanowires (diameter ~ 60 nm) embedded in uniform SiCxNyshells were obtained in high yields, whereby the growth process was not influenced by the nature of substrates. The shell material exhibited high oxidation and chemical resistance at elevated temperatures (up to 250 °C) resulting in the preservation of size-dependent semiconductor properties of germanium nanowires, such as intact transport of charge carriers and reduction of energy consumption, when compared to pure Ge nanowires.