Investigations on chemical vapour deposition of magnesium-boron-containing metal-organic precursors

Single-molecular magnesium-boron precursors [Mg(C3H6-BC8H14)2] and [Mg{C3H6-B(C6H11)2}2] were applied in chemical vapour deposition processes and characterized using SEM, XRD, XPS, AFM and MS methods towards their fragmentation behaviour, film morphology, phase formation and film composition. Depositon procedures in a temperature range from 500 to 1000 °C produced smooth and thin films with Mg and B in the ration 1:2. It could be shown that the contamination of the deposits by a considerably fraction of residual carbon could be reduced by post-deposition in-situ tempering or additionally sputter processes which may lead to improved deposition of MgB2-films.